7.
Y. Zhang, “High
Electron Mobility Transistors with Charge Compensation”, US 16/881,846
(Pending)
6.
Y. Zhang, K. Sasaki, “Gallium
Oxide Vertical Schottky Barrier Diode”, Provisional, Aug. 2019, VTIP 20-015
5.
Y. Zhang, T. Palacios,
“Vertical Nitride Semiconductor Device”, US 14/662837 (Pending)
4.
Y. Zhang, K. Teo,
"Semiconductor Device With Multiple Carrier Channels", US 9876102,
Jan. 2018
3.
Y. Zhang, T. Palacios,
“Enhancement-mode Transistors with Increased Threshold Voltage”, US 9704959,
Jul. 2017.
2.
Y. Zhang, K. Teo,
"Semiconductor Device With Multiple-Functional Barrier Layer", US
9583607, Feb. 2017
1.
Y. Zhang, K. Teo,
"Semiconductor Device With Multiple Carrier Channels", US 9419121,
Aug. 2016